Suitable for testing needs of silicon wafer mass production
SEpA I uses electronic scanning technology to inspect silicon wafers, achieving high-resolution imaging and high-precision measurement, providing solutions for capacity improvement and process control in the development and mass production processes.
High spatial resolution
The electron optical tube of SEpA I has been carefully optimized and designed, and uses unique aberration elimination technology. The maximum resolution can reach 3 nm, which can obtain clear secondary electron imaging.
High stability fully automatic detection
SEpA I uses high-precision electron beam control technology and image matching technology to ensure high repeatability of detection, and the detection error can be controlled within 1%. Fully automatic detection is based on customizable process recipes, and flexible process settings are made according to needs. When performing fully automatic detection on batch samples, SEpA I can ensure high reliability of the data obtained for each sample and each test.
Low vacuum technology
By combining our unique low vacuum function module, the charging effect on the sample surface can be effectively suppressed, which helps to obtain clear and stable images for accurate measurement.
Energy Dispersive X-ray Spectroscopy (EDS)
SEpA I can be used with the EDS elemental analysis module to achieve quick and easy defect analysis (such as analysis of particle composition on the surface of silicon wafers, etc.). Low acceleration voltage is used in the measurement to ensure high resolution and reduce sample damage.
Optional Features
Low vacuum charge suppression technology
Energy Dispersive X-ray Spectroscopy (EDS)